INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2033
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Cain
IC= 0.1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
MIN TYP. MAX UNIT
120
V
120
V
5
V
2.0
V
10 μA
10 μA
60
320
50
MHz
hFE Classifications
D
E
F
60-120 100-200 160-320
isc Website:www.iscsemi.cn
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