2SD2220(2003) 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD2220 Datasheet PDF : 3 Pages
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Power Transistors
2SD2220
Silicon NPN triple diffusion planar type darlington
For low-frequency amplification
7.5±0.2
Unit: mm
4.5±0.2
■ Features
• Forward current transfer ratio hFE is designed high, which is appro-
0.65±0.1
0.85±0.1
1.0±0.1 0.8 C
0.8 C
priate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
• Allowing supply with the radial taping
0.7±0.1
1.15±0.2
0.7±0.1
1.15±0.2
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
0.5±0.1
0.4±0.1
e e) Collector-base voltage (Emitter open) VCBO
100
V
c typ Collector-emitter voltage (Base open) VCEO
80
V
n d tage. ued Emitter-base voltage (Collector open) VEBO
5
V
le s ontin Collector current
IC
1
A
a elifecyc disc Peak collector current
ICP
1.5
A
n u t ed, Collector power dissipation
PC
1.5
W
roduc d typ Junction temperature
Tj
150
°C
te tin ur P tinue Storage temperature
Tstg −55 to +150 °C
0.8 C 1 2 3
2.5±0.2
2.5±0.2
Internal Connection
B
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
C
wing fodiscon ≈ 200 Ω E
in n s follo laned ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clude pe, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d in e ty Collector-base voltage (Emitter open)
tinue nanc Collector-emitter voltage (Base open)
M is con inte Emitter-base voltage (Collector open)
/Dis , ma Collector-base cutoff current (Emitter open)
D ance type Emitter-base cutoff current (Collector open)
inten nce Forward current transfer ratio
Ma tena Collector-emitter saturation voltage
ain Base-emitter saturation voltage
ed m Transition frequency
VCBO
VCEO
VEBO
ICBO
IEBO
hFE *
VCE(sat)
VBE(sat)
fT
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
100
80
5
4 000
0.1
0.1
20 000
1.8
2.2
150
V
V
V
µA
µA
V
V
MHz
(plan Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Publication date: May 2003
SJD00254BED
1
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