2SD2384 데이터 시트보기 (PDF) - Toshiba
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2SD2384 Datasheet PDF : 5 Pages
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2SD2384
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 6 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 10 A
IC = 6 A, IB = 6 mA
VCE = 5 V, IC = 6 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
―
―
140
5000
2000
―
―
―
―
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
―
5.0
µA
―
5.0
µA
―
―
V
― 30000
―
―
―
―
2.5
V
―
3.0
V
30
― MHz
90
―
pF
Marking
TOSHIBA
2SD2384
JAPAN
hFE classification (A/B/C)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04
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