2SD2386 데이터 시트보기 (PDF) - Toshiba
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2SD2386 Datasheet PDF : 4 Pages
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IC – VCE
10
Common emitter
Tc = 25°C
8
450 400
500
350
6
300
250
4
200
150
2
IB = 100 µA
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
2SD2386
10
Common emitter
VCE = 5 V
8
IC – VBE
6
4 Tc = 100°C
2
−25
25
0
0
1
2
3
4
5
Base-emitter voltage VBE (V)
50000
30000
10000
5000
3000
hFE – IC
Tc = 100°C
25
1000
500
300
100
0.03
−25
Common emitter
VCE = 5 V
0.1
0.3
1
3
10
30 50
Collector current IC (A)
VCE (sat) – IC
5
Common emitter
3 IC/IB = 250
1
25
0.5
0.3
−25
Tc = 100°C
0.1
0.03 0.05 0.1
0.3 0.5 1
3 5 10
Collector current IC (A)
PC – Ta
120
Tc = Ta Infinite heat sink
100
80
60
40
20
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
Safe Operating Area
20
IC max (pulsed)*
10
IC max (continuous)
10 ms*
5
3
100 ms*
DC operation
Tc = 25°C
1
*: Single nonrepetitive pulse
Tc = 25°C
0.5 Curves must be derated
linearly with increase in
temperature.
0.3
5
10
30 50
VCEO
max
100
300
Collector-emitter voltage VCE (V)
3
2004-07-07
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