2SD2440 데이터 시트보기 (PDF) - Toshiba
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2SD2440 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
ICER
VCE = 80 V, RBE = 50 Ω
IEBO
VEB = 15 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 5 V, IC = 5 A
IC = 5 A, IB = 1 A
IC = 5 A, IB = 1 A
VCE = 10 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 µs Input IB1
Output
Switching time Storage time
Fall time
tstg
IB2
VCC = 50 V
tf
IB1 = −IB2 = 0.5 A, duty cycle ≤ 1%
Note: hFE (1) classification GR: 200 to 400, BL: 300 to 600, V: 450 to 900
Marking
2SD2440
Min Typ. Max Unit
―
―
10
µA
―
―
5
mA
―
―
2
µA
60
―
―
V
200
―
900
20
―
100
―
―
1.2
V
―
―
2.5
V
―
5
― MHz
―
71
―
pF
―
1
2
―
2
4
µs
―
1
3
D2440
Product No.
Lot No.
hFE classification (GR/BL/V)
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04
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