2SD2299 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD2299

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD2299

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector surge current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCES

VEBO

IC

I C(peak)

I C(surge)

PC * 1

Tj

Tstg

ID

Ratings

Unit

1500

V

6

V

3

A

3.5

A

10

A

40

W

150

°C

–55 to +150

°C

3.5

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

I CES

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

C to E diode forward voltage VECF

—

—

Fall time

tf

—

—

Max Unit

—

V

500 µA

5

V

1.5 V

2.2 V

0.8 µs

Test conditions

IE = 300 mA, IC = 0

VCE = 1500 V, RBE = 0

IC = 2.5 A, IB = 0.8 A

IC = 2.5 A, IB = 0.8 A

IF = 3 A

ICP = 2.75 A, IB1 = 0.6 A,

fH = 15.75 kHz

2

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