2SD2655 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SD2655 Datasheet PDF : 6 Pages
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2SD2655
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to Base Voltage
V
60
V
CBO
Collector to emitter voltage
V
50
V
CEO
Emitter to base voltage
VEBO
6
V
Collector current
IC
1
A
Collector peak current
ic(peak)
2
A
Collector power dissipation
P
800*
mW
C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25 °C)
Item
Symbol Min
Collector to base breakdown V
60
(BR)CBO
voltage
Collector to emitter breakdown V(BR)CEO
50
voltage
Emitter to base breakdown
V(BR)EBO
6
voltage
Collector cutoff current
I
CBO
Emitter cutoff current
I
EBO
DC current transfer ratio
h
200
FE
Collector to emitter saturation VCE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product
fT
Collector output capacitance Cob
Typ
0.16
0.91
280
4.2
Max
100
100
500
0.3
1.2
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Condition
I
C
=
10
µA,
I
E
=
0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
V = 50 V, I = 0
CB
E
V = 5 V, I = 0
EB
C
V = 2 V, I = 0.1 A
CE
C
IC = 0.5 A, IB = 0.05 A,
Pulse test
I = 0.5 A, I = 0.05 A,
C
B
Pulse test
VCE = 2 V, IC = 0.1 A
VCB = 10 V, IE = 0,
f = 1 MHz
Rev.1, Jun. 2001, page 2 of 6
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