2SD2615 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2615 Datasheet PDF : 2 Pages
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Transistors
For Motor / Relay drive (120V, 6A)
2SD2615
2SD2615
zStructure
NPN Silicon Epitaxial Planar Transistor
(Darlington connection)
zFeatures
1) Darlington connection , high hFE.
2) Resistor inbetween base-emitter.
3) Built-in damper diode.
zApplications
Relay drive
Motor drive
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zComplements
PNP
2SB1674
NPN
2SD2615
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature
∗1 t=100ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
Unit
120
V
120
V
6
V
6
A
10
A ∗1
2 W(Ta=25°C)
30 W(Tc=25°C)
150
°C
−55 to +150
°C
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SD2615
Taping
−
500
zEquivalent circuit
Base
Collector
R1=5.0KΩ
R1
R2 Emitter
R2=300Ω
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage
BVCBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
∗1 Pulse test ∗2 Transition frequency of the device
Min. Typ. Max. Unit
Conditions
120 − − V IC=5mA
120 − − V IC=50µA
− − 100 µA VCB=120V
−
−
3 mA VEB=5V
− − 1.5 V IC/IB=3A/6mA
∗1
2k − 20k − VCE=3V, IC=2A
∗1
− 40 − MHz VCE=5V, IE=−0.2A, f=10MHz ∗2
− 50 − pF VCB=10V, IE=0A, f=1MHz
1/1
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