2SD2559 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD2559

Color TV Horizontal Deflection Output Applications / NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2559

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 300mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 6A; IB=B 1.2A

ICBO

Collector Cutoff Current

VCB= 1500V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 6A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 6A

fT

Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V

COB

Output Capacitance

Switching Times

IE= 0; VCB= 10V; ftest=1.0MHz

ts

Storage Time

tf

Fall Time

ICP= 6A, IB1(end)= 1.2A,

fH= 15.75kHz

MIN TYP. MAX UNIT

5

V

5.0

V

1.5

V

1.0 mA

83

250 mA

10

30

5

9

1.8

V

2

MHz

125

pF

8.5 μs

0.7 μs

isc Website：www.iscsemi.cn

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