2SD2560 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2560 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA
VBEsat Base-emitter saturation voltage
IC=10A ;IB=10mA
ICBO
Collector cut-off current
VCB=150V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=10A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4Ω
IB1=-IB2=10mA
VCC=40V
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
Product Specification
2SD2560
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100 μA
100 μA
5000
120
pF
70
MHz
0.8
μs
4.0
μs
1.2
μs
2
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