2SD2586 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2586 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2586
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IC=300mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=3.5A; IB=0.8A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3.5A ; VCE=5V
VF
Diode forward voltage
IF=5A
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times :
ts
Storage time
tf
Fall time
ICP=3.5A;IB1=0.8A
fH =15.75kHz
MIN TYP. MAX UNIT
5
V
5
V
0.9
1.5
V
1
mA
70
250
mA
8
28
4.4
8.5
1.5
2.0
V
73
pF
2.5
MHz
7.5
10
μs
0.3
0.6
μs
2
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