2SD2385 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
2SD2385 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2385
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 7mA
VBE(on) Base-Emitter On Voltage
IC= 7A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
2.5
V
3.0
V
5
μA
5
μA
hFE-1
DC Current Gain
IC= 7A ; VCE= 5V
5000
30000
hFE-2
DC Current Gain
IC= 12A ; VCE= 5V
2000
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
110
pF
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V
30
MHz
hFE-1 Classifications
A
B
C
5000-12000 9000-18000 15000-30000
isc Website：www.iscsemi.cn
2
Share Link: 