2SD2241 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2241 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
VBEsat Base-emitter saturation voltage
IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=100V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
VECF
Diode forward voltage
Switching times
IC=1.5A ; VCE=2V
IC=3A ; VCE=2V
IE=1A ; IB=0
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=6mA
VCC≈30V ,RL=10Ω
Duty cycle≤1%
Product Specification
2SD2241
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
20
μA
2.5
mA
2000
1000
2.0
V
0.2
μs
1.5
μs
0.6
μs
2
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