D2251 데이터 시트보기 (PDF) - Inchange Semiconductor

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D2251

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2251

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

800

V

VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A

5

V

VBEsat Base-emitter saturation voltage

IC=5 A;IB=1A

1.5

V

ICBO

Collector cut-off current

VCB=800V; IE=0

10

μA

ICES

Collector cut-off current

VCE=1500V ;RBE=0

1.0

mA

IEBO

Emitter cut-off current

VEB=4V; IC=0

40

130

mA

hFE-1

DC current gain

IC=5A ; VCE=5V

5

8

hFE-2

DC current gain

IC=1A ; VCE=5V

8

VF

Diode forward voltage

tf

Fall time

IEC=7A; IB=0

IC=4A;RL=50Ω

IB1=0.8A;-IB2=1.6A;VCC=200V

2.0

V

0.1

0.3

μs

2

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