2SD2293 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD2293

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2293

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VEBO(BR) Emitter-base breakdown voltage

IE=350mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=2.5A; IB=0.8A

hFE

DC current gain

IC=0.5A ; VCE=5V

ICES

Collector cut-off current

VCE=1500V; VBE=0

MIN TYP. MAX UNIT

700

V

6

V

5.0

V

1.5

V

8

0.5 mA

2

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