2SD2296 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD2296

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2296

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=:

V(BR)EBO Emitter-base breakdown voltage

IE=10mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A

VBEsat

Base-emitter saturation voltage

IC=4.5A; IB=1.2A

ICES

Collector cut-off current

hFE

DC current gain

Switching times

VCE=1500V ;RBE=0

IC=1A ; VCE=5V

tf

Fall time

IC=4.0A;IB1=0.8A;IB2=-1.5A

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

0.5

mA

8

30

0.8

µs

2

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