2SD2495 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SD2495 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA
VBEsat Emitter-base saturation voltage
IC=5A; IB=5mA
ICBO
Collector cut-off current
VCB=110V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=-IB2=5mA
VCC=30V ,RL=6Ω
hFE Classifications
O
p
5000-12000 6500-20000
Y
15000-30000
www.jmnic.com
2SD2495
MIN
110
5000
TYP.
MAX
2.5
3.0
0.1
0.1
UNIT
V
V
V
mA
mA
60
MHz
55
pF
0.8
μs
6.2
μs
1.1
μs
JMnic
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