2SD2439 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2439 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2439
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
150
V
VCEsat Collector-emitter saturation voltage IC=7 A;IB=7m A
2.5
V
VBEsat
ICBO
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=7 A;IB=7m A
VCB=160V ;IE=0
VEB=5V; IC=0
3.0
V
100 μA
100 μA
hFE
DC current gain
IC=7A ; VCE=4V
5000
fT
Transition frequency
IC=2A ; VCE=12V
55
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
95
pF
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10Ω
IB1=-IB2=7mA
VCC=70V
0.5
10.0
1.1
hFE classifications
μs
μs
μs
O
P
Y
5000-12000 6500-20000 15000-30000
2
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