2SD476 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SD476 Datasheet PDF : 5 Pages
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2SD476(K), 2SD476A(K)
Electrical Characteristics (Ta = 25°C)
2SD476(K)
2SD476A(K)
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
70
—
—
70 —
—
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
—
—
60 —
—
V
IC = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1
——1
——1
µA VCB = 50 V, IE = 0
60 — 200 60 — 200
VCE = 4 V, IC = 1 A
(Pulse test)
Collector to emitter
saturation voltage
hFE2
VCE(sat)
35 —
——
— 35 —
1.0 — —
—
1.0 V
VCE = 4 V, IC = 0.1 A
IC = 2 A, IB = 0.2 A
Base to emitter
saturation voltage
VBE(sat)
——
1.2 —
—
1.2 V
Gain bandwidth product fT
—7 — —7 —
Turn on time
t on
— 0.3 — — 0.3 —
Turn off time
t off
— 3.0 — — 3.0 —
Storage time
t stg
— 2.5 — — 2.5 —
Note: 1. The 2SD476(K) and 2SD476A(K) are grouped by hFE1 as follows.
MHz
µs
µs
µs
VCE = 4 V, IC = 0.5 A
VCC = 10.5 V
IC = 10 IB1 = –10 IB2 =
0.5 A
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
10
5 IC max
2
(10 V, 4 A)
PC = 40 W
1.0
(20 V, 2 A)
0.5
TC = 25°C
0.2
0.1
1
(50 V, 0.22 A)
2SD476A K 2SD476 K
(60 V, 0.15 A)
2
5 10 20 50 100
Collector to emitter voltage VCE (V)
2
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