D5011 데이터 시트보기 (PDF) - Inchange Semiconductor

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D5011

NPN SILICON EPITAXIAL TRANSISTOR

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD5011

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 3.5A

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V

tf

Fall Time

IC= 3A, IB1= 0.8A; IB2= -1.6A

RL= 66.7Ω;VCC= 200V

8.0

V

1.5

V

10

μA

40

130 mA

8

2.0

V

3

MHz

0.4 μs

isc Website：www.iscsemi.cn

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