2SD5070 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD5070 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5070
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 2.5A
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
tf
Fall Time
IC= 2A, IB1= 0.6A; IB2= -1.2A
RL= 100Ω; VCC= 200V
8.0
V
1.5
V
10
μA
40
200 mA
8
2.0
V
3
MHz
0.4 μs
isc Website：www.iscsemi.cn
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