2SD5075 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD5075 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5075
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A
8.0
V
VBEsat Base-emitter saturation voltage
IC=2.5A;IB=0.8A
1.5
V
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
VEB=5V; IC=0
VCB=800V; IE=0
1.0 mA
10
μA
hFE
DC current gain
IC=0.5 A ; VCE=5V
8
fT
Transition frequency
IC=0.5 A ; VCE=10V
3
MHz
tf
Fall time
IC=3A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=66.7Ω
0.4
μs
固电半导体
INCHANGE
SEMICONDUTOR
2
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