2SD381 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD381

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A

VBEsat Base-emitter saturation voltage

IC=1A; IB=0.1A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=120V; IE=0

VEB=3V; IC=0

IC=5mA ; VCE=5V

hFE-2

DC current gain

IC=0.3A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V; f=1MHz

fT

Transition frequency

IC=0.1A ; VCE=5V

‹ hFE-2 Classifications

N

M

L

K

40-80 60-120 80-160 120-250

Product Specification

2SD381

MIN TYP. MAX UNIT

120

V

2.0

V

1.5

V

1.0 μA

1.0 μA

25

40

250

25

pF

45

MHz

2

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