2SD427 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

2SD427

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SD427

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·High Power Dissipation-

: PC= 80W(Max)@TC=25℃

·Complement to Type 2SB557

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 50W high-fidelity audio frequency

amplifier output stage.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

IE

Emitter Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

-8

A

80

W

150

℃

Tstg

Storage Temperature

-65~150 ℃

isc Website：www.iscsemi.cn

Share Link: