2SD762A 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD762A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SD762
2SD762A
IC=0.2A; L=25mH
VCEsat Collector-emitter saturation voltage IC=2 A;IB=B 0.4 A
VBE
Base-emitter on voltage
IC=1A ; VCE=3V
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=3V
hFE-2
DC current gain
IC=1A ; VCE=3V
hFE-2 classifications
Q
P
O
30-60 50-100 80-160
Product Specification
2SD762 2SD762A
MIN TYP. MAX UNIT
60
V
80
1.0
V
1.2
V
30
μA
1
mA
40
30
160
2
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