2SD849 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD849

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD849

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

600

V

V(BR)EBO Emitter-base breakdown votage

IE=10mA; IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=3 A;IB=1A

5.0

V

VBEsat Base-emitter saturation voltage

IC=3 A;IB=1A

1.5

V

ICBO

Collector cut-off current

VCB=750V;IE=0

VCB=1500V;IE=0

0.1

mA

1.0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

8

hFE-2

tf

ts

DC current gain

固IN电C半H导AN体GE SEMICONDUTOR Fall time

Storage time

IC=3A ; VCE=10V

IC=3 A;IBend=1A;LB=20μH

4

12

0.9

13

μs

μs

2

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