2SD864 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD864

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD864

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA , IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A, IB=B -30mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 1.5A, IB= -3mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 3A, IB=B -30mA

ICBO

Collector Cutoff Current

VCB= 120V, IE= 0

ICEO

Collector Cutoff Current

VCE= 100V, RBE= ∞

hFE

DC Current Gain

IC= 1.5A; VCE= 3V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 1.5A; IB1= -IB2= 3mA

MIN TYP. MAX UNIT

120

V

7

V

1.5

V

3.0

V

2.0

V

3.5

V

100 μA

10

μA

1000

20000

0.5

μs

4.5

μs

1.1

μs

isc Website：www.iscsemi.cn

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