MT28C3212P2FL 데이터 시트보기 (PDF) - Micron Technology

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MT28C3212P2FL

FLASH AND SRAM COMBO MEMORY

Micron Technology 

2 MEG x 16 PAGE FLASH

128K x 16 SRAM COMBO MEMORY

BALL DESCRIPTIONS (continued)

66-BALL FBGA

NUMBERS

E4

SYMBOL

F_VPP

D10, H3

A9, H8

D9

D3

A10

A1, A2, A11,

A12, C4, H1,

H2, H10, H11,

H12

F_VCC

F_VSS

S_VCC

S_VSS

VCCQ

NC

TYPE

Input/

Supply

Supply

Supply

Supply

Supply

Supply

–

DESCRIPTION

Flash Program/Erase Power Supply: [0.9V–2.2V or 11.4V–12.6V].

Operates as input at logic levels to control complete device protection.

Provides backward compatibility for factory programming when driven

to 11.4V–12.6V. A lower F_VPP voltage range (0.0V–2.2V) is available on

the MT28C3212P2NFL device.

Flash Power Supply: [1.65V–1.95V or 1.80V–2.20V]. Supplies power for

device operation.

Flash Specific Ground: Do not float any ground pin.

SRAM Power Supply: [1.65V–1.95V or 1.80V–2.20V]. Supplies power for

device operation.

SRAM Specific Ground: Do not float any ground pin.

I/O Power Supply: [1.65–1.95V or 1.80V–2.20V]. This input should be tied

directly to VCC.

No Connect: Lead is not internally connected; it may be driven or

floated.

2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory

MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02

6

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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