MT28C3212P2FL 데이터 시트보기 (PDF) - Micron Technology

부품명

상세내역

제조사

MT28C3212P2FL

FLASH AND SRAM COMBO MEMORY

Micron Technology 

2 MEG x 16 PAGE FLASH

128K x 16 SRAM COMBO MEMORY

ARCHITECTURE AND MEMORY

ORGANIZATION

The Flash memory device contains two separate

memory banks (bank a and bank b) for simultaneous

READ and WRITE operations. Bank a is 2Mb deep and

contains 8 x 4K-word parameter blocks and seven 32K-

word blocks. Bank b is 28Mb deep, is equally sectored,

and contains fifty-six 32K-word blocks.

Figures 2 and 3 show the top and bottom memory

organizations.

2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory

MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02

8

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

Share Link: