2SD970 데이터 시트보기 (PDF) - Renesas Electronics

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2SD970

Silicon NPN Triple Diffused

Renesas Electronics 

2SD970(K)

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

t on

t stg

tf

—

—

—

—

1000 —

—

—

—

—

—

—

—

—

—

0.4

—

5.4

—

1.1

Max Unit

—

V

—

V

100 µA

10

µA

20000

1.5 V

3.0 V

2.0 V

3.5 V

—

µs

—

µs

—

µs

Test conditions

IC = 25 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 100 V, RBE = ∞

VCE = 3 V, IC = 4 A*1

IC = 4 A, IB = 8 mA*1

IC = 8 A, IB = 80 mA*1

IC = 4 A, IB = 8 mA*1

IC = 8 A, IB = 80 mA*1

IC = 4 A, IB1 = –IB2 = 8 mA

Maximum Collector Dissipation Curve

60

40

20

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

30

iC (peak)

1 µs

10

IC max

(Continuous)

3

1.0

0.3

0.1

Ta = 25°C

1 shot pulse

0.03

1 3 10 30 100 300 1,000

Collector to emitter voltage VCE (V)

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