2SD904 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD904

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD904

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·Low Collector Saturation Voltage-

: VCE(sat)= 5.0V(Max.)@ IC= 3A

·Built-in Damper Diode

APPLICATIONS

·Designed for color TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current- Continuous

7

A

ICM

Collector Current- Peak

Collector Power Dissipation

@ Ta= 25℃

PC

Collector Power Dissipation

@ TC= 25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

10

A

3

W

50

150

℃

-40~150

℃

isc Website：www.iscsemi.cn

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