2SD904 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD904

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD904

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 35mH

600

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

6

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.6A

ICES

Collector Cutoff Current

VCB= 1500V; VBE= 0

IEBO

Collector Cutoff Current

VEB= 4V; IC= 0

44

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

8

hFE-2

DC Current Gain

IC= 4A; VCE= 5V

5

VECF

C-E Diode Forward Voltage

IF= 4A

V

V

5.0

V

1.6

V

1.0 mA

100 mA

10

2.0

V

isc Website：www.iscsemi.cn

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