2SD907 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD907 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD907
DESCRIPTION
·High Collector Current
·Good Linearity of hFE
·High Reliability
·Wide Area of Safe Operation
APPLICATIONS
·Audio amplifier
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
80
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.56 ℃/W
isc Website：www.iscsemi.cn
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