2SD985 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD985 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD985 2SD986
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB794/795
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
2SD985
Collector-emitter voltage
Open base
VALUE
150
60
UNIT
V
V
2SD986
80
VEBO
IC
ICM
Emitter -base voltage
Collector current
Collector current-Peak
Open collector
8
V
±1.5
A
±3.0
A
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ta=25℃
TC=25℃
0.15
A
1.0
W
10
150
℃
-55~150
℃
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