Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −2.5 A
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SJ438
Min Typ. Max Unit
—
—
±10
µA
—
— −100 µA
−60
—
—
V
−0.8
— −2.0
V
— 0.24 0.28
Ω
— 0.16 0.19
2.0
4.0
—
S
—
630
—
—
95
—
pF
—
290
—
—
25
—
Turn−on time
ton
Switching time
Fall time
tf
—
45
—
ns
—
55
—
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
Gate−drain (“miller”) charge
Qgd
—
200
—
—
22
—
—
16
—
nC
—
6
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
—
—
—
—
IDR = −5 A, VGS = 0 V
—
—
IDR = −5 A, VGS = 0 V dIDR / dt = 50 A / µs
—
—
−5
A
—
−20
A
—
1.7
V
80
—
ns
0.1
—
µC
Marking
2
2002-09-02