2SJ464
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −9 A
VGS = −4 V, ID = −9 A
VDS = −10 V, ID = −9 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
⎯
⎯ −100 μA
−100 ⎯
⎯
V
−0.8
⎯
−2.0
V
⎯
64
90
mΩ
⎯
85 120
7
15
⎯
S
⎯ 2900 ⎯
pF
⎯ 480 ⎯
pF
⎯ 1000 ⎯
pF
tr
0V
VGS
ton
−10 V
tf
⎯
25
⎯
ID = −9 A
VOUT
⎯
45
⎯
ns
VDD ∼− −50 V
⎯
25
⎯
toff
Duty <= 1%, tw = 10 μs
⎯ 170 ⎯
Qg
⎯ 140 ⎯
nC
Qgs
VDD ∼− −80 V, VGS = −10 V, ID = −18 A
⎯
90
⎯
nC
Qgd
⎯
50
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = −18 A, VGS = 0 V
IDR = −18 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯
⎯
−18
A
⎯
⎯
−72
A
⎯
⎯
1.7
V
⎯ 220 ⎯
ns
⎯ 0.97 ⎯
μC
Marking
J464
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29