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2SJ464 데이터 시트보기 (PDF) - Toshiba

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2SJ464 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ464
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −9 A
VGS = −4 V, ID = −9 A
VDS = −10 V, ID = −9 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
±10
μA
⎯ −100 μA
100
V
0.8
2.0
V
64
90
mΩ
85 120
7
15
S
2900
pF
480
pF
1000
pF
tr
0V
VGS
ton
10 V
tf
25
ID = −9 A
VOUT
45
ns
VDD ∼− 50 V
25
toff
Duty <= 1%, tw = 10 μs
170
Qg
140
nC
Qgs
VDD ∼− 80 V, VGS = −10 V, ID = −18 A
90
nC
Qgd
50
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = −18 A, VGS = 0 V
IDR = −18 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
18
A
72
A
1.7
V
220
ns
0.97
μC
Marking
J464
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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