2SJ275 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SJ275

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ275

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25°C

Parameter

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source ON-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=–1mA, VGS=0

IG=±100µA, VDS=0

VDS=–100V, VGS=0

VGS=±12V, VDS=0

VDS=–10V, ID=–1mA

VDS=–10V, ID=–3A

ID=–3A, VGS=–10V

ID=–3A, VGS=–4V

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=–6A, VGS=0

Switching Time Test Circuit

Ratings

Unit

–100 V

±15 V

–6 A

–24 A

1.65 W

50 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ max

–100

V

±15

V

–100 µA

±10 µA

–1.0

–2.0 V

3

5

S

0.3

0.4 Ω

0.4 0.55 Ω

950

pF

200

pF

40

pF

15

ns

30

ns

80

ns

70

ns

–1.0 –1.5 V

No.4240–2/4

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