2SJ278 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ278 Datasheet PDF : 8 Pages
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2SJ278
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
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