2SJ278 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SJ278

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ278

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5×20×0.7 mm)

3. Marking is “MY”.

Ratings

–60

±20

–1

–4

–1

1

150

–55 to +150

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –60

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–1.0

—

—

Forward transfer admittance |yfs|

0.6

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Typ

—

—

—

—

—

0.7

0.9

1.0

160

80

28

7

8

30

25

–1.1

90

Max Unit

—

V

—

V

±5

µA

–10 µA

–2.25 V

0.83 Ω

1.2

Ω

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –50 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –0.5 A, VGS = –10 V*1

ID = –0.5 A, VGS = –4 V*1

ID = –0.5 A, VDS = –10 V*1

VDS = –10 V, VGS = 0,

f = 1 MHz

ID = –0.5 A, VGS = –10 V,

RL = 60 Ω

IF = –1 A, VGS = 0

IF = –1 A, VGS = 0,

diF/dt = 50 A/µs

2

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