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2SJ278 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SJ278
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SJ278 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SJ278
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
I D = –1 A
-0.6
-0.4
–0.5 A
–0.2
–0.2 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
0.05
–0.05 –0.1 –0.2 –0.5 –1 –2 –5
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
1.2
VGS = –4 V
–0.5 A
–1 A –0.2 A
–1 A
0.8
–0.5 A
–10 V
–0.2 A
0.4
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
5
2
1
Tc = –25 °C
25 °C
0.5
75 °C
0.2
V DS = –10 V
0.1
Pulse Test
0.05
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current I D (A)
4

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