2SJ278 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ278 Datasheet PDF : 8 Pages
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Body–Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs
200
VGS = 0, duty < 1 %
100
50
20
10
5
–0.02 –0.05 –0.1 –0.2 –0.5 –1 –2
Reverse Drain Current I DR (A)
1000
2SJ278
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0
f = 1 MHz
1
0 –10 –20 –30 -40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–40 V
–4
–40
V DS
ID = –1A
–8
–60 VDD = –10 V
–25 V
–40 V
–80
–12
V GS
–16
–100
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
500
V GS = –10 V, V DD = –30 V
PW = 2 µs, duty < 1 %
200
100
50 t d(off)
tf
20
tr
10
t d(on)
5
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current I D (A)
5
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