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2SJ278MYTR-E 데이터 시트보기 (PDF) - Renesas Electronics

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제조사
2SJ278MYTR-E
Renesas
Renesas Electronics Renesas
2SJ278MYTR-E Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SJ278
Main Characteristics
Power vs. Temperature Derating
2.0
1.5
1.0
0.5
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.0
–10 V
Pulse Test
–6 V
–1.6
–4 V
–3 V
–1.2
–0.8
–2.5 V
–0.4
0
0
VGS = –2 V
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
ID = –1 A
–0.6
–0.4
–0.5 A
–0.2
–0.2 A
0
0
–2
–4 –6
–8 –10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–5
–3
–1
–0.3
–0.1
–0.03
Operation in
this area is
limited by RDS (on)
–0.01 Ta = 25°C
–0.005
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–1.0
–0.8
VDS = –10 V
Pulse Test
–0.6
Tc = 75°C
–0.4
25°C
–0.2
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
0.05
–0.05 –0.1 –0.2 –0.5 –1 –2 –5
Drain Current ID (A)

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