2SJ278MYTR-E 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ278MYTR-E Datasheet PDF : 9 Pages
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2SJ278
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
–0.5 A, –0.2 A ID = –1 A
1.2
VGS = –4 V
0.8
–10 V
0.4
–1 A
–0.5 A, –0.2 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.02
di / dt = 50 A / µs
VGS = 0, duty ≤ 1 %
–0.05 –0.1 –0.2 –0.5 –1 –2
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–40 V
–4
–40
VDS
VGS
–60
VDD = –10 V
–25 V
–40 V
–80
ID = –1 A
–100
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Forward Transfer Admittance vs.
Drain Current
5
2
Tc = –25°C
1
25°C
0.5
75°C
0.2
0.1
0.05
–0.01 –0.02
VDS = –10 V
Pulse Test
–0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
Coss
30
Crss
10
3
VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
200
100
tf
50 td(off)
20
10
td(on)
tr
5
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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