2SJ451ZK-TR-E 데이터 시트보기 (PDF) - Renesas Electronics

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2SJ451ZK-TR-E

Silicon P Channel MOS FET

Renesas Electronics 

2SJ451

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Note: 2. Pulse test

Symbol

V (BR) DSS

V (BR) GSS

IDSS

IGSS

VGS (off)

RDS (on) 1

RDS (on) 2

|yfs|

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Min

–20

±20

—

—

–0.5

—

—

0.13

—

—

—

—

—

—

—

Typ

—

—

—

—

—

2.3

5.0

0.23

2.4

31

0.6

170

680

3.0

2.8

Max

—

—

–1.0

±2.0

–1.5

3.5

9.0

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

µs

µs

(Ta = 25°C)

Test Conditions

ID = –100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = –16 V, VGS = 0

VGS = ±16 V, VDS = 0

ID = –10 µA, VDS = –5 V

ID = –100 mA, VGS = –4 V Note 2

ID = –40 mA, VGS = –2.5 V Note 2

ID = –100 mA, VDS = –10 V Note 2

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –0.1 A

VGS = –10 V

RL = 100 Ω

REJ03G864-0400 Rev.4.00 Sep 07, 2007

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