2SJ567(TE16L1,NQ)(2009) 데이터 시트보기 (PDF) - Toshiba

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2SJ567(TE16L1,NQ)
(Rev.:2009)

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)

Toshiba 

2SJ567

Electrical Characteristics (Ta = 25°C)

Characteristic

Gate leakage current

Drain cutoff current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-on time

Fall time

Turn-off time

Total gate charge

(Gate source plus gate-drain)

Gate-source charge

Gate-drain (“Miller”) charge

Symbol

Test Condition

Min Typ. Max Unit

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

⎪Yfs⎪

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = −200 V, VGS = 0 V

ID = −10 mA, VGS = 0 V

VDS = −10 V, ID = −1 mA

VGS = −10 V, ID = −1.5 A

VDS = −10 V, ID = −1.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

⎯

±10

μA

⎯

⎯ −100 μA

−200 ⎯

⎯

V

−1.5

⎯

−3.5

V

⎯

1.6 2.0

Ω

1.0 2.0

⎯

S

⎯ 410 ⎯

⎯

40

⎯

pF

⎯ 145 ⎯

tr

0V

VGS

ton

−10 V

ID = −1.5 A VOUT

⎯

20

⎯

⎯

45

⎯

RL = 66.7 Ω

ns

tf

⎯

15

⎯

VDD ≈ −100 V

toff

Duty ≤ 1%, tw = 10 μs

⎯

85

⎯

Qg

VDD ≈ −160 V, VGS = −10 V,

Qgs

ID = −2.5 A

Qgd

⎯

10

⎯

⎯

6

⎯

nC

⎯

4

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Continuous drain reverse current (Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

⎯

⎯

IDR = −2.5 A, VGS = 0 V

IDR = −2.5 A, VGS = 0 V,

dIDR/dt = 100 A/μs

Min Typ. Max Unit

⎯

⎯

−2.5

A

⎯

⎯

−10

A

⎯

⎯

2.0

V

⎯

135

⎯

ns

⎯ 0.81 ⎯

μC

Marking

J567

Part No.

Lot No.

Note 4

Note 4: A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

2

2009-07-13

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