2SJ567
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(Gate source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −200 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −1.5 A
VDS = −10 V, ID = −1.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±10
μA
⎯
⎯ −100 μA
−200 ⎯
⎯
V
−1.5
⎯
−3.5
V
⎯
1.6 2.0
Ω
1.0 2.0
⎯
S
⎯ 410 ⎯
⎯
40
⎯
pF
⎯ 145 ⎯
tr
0V
VGS
ton
−10 V
ID = −1.5 A VOUT
⎯
20
⎯
⎯
45
⎯
RL = 66.7 Ω
ns
tf
⎯
15
⎯
VDD ≈ −100 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
85
⎯
Qg
VDD ≈ −160 V, VGS = −10 V,
Qgs
ID = −2.5 A
Qgd
⎯
10
⎯
⎯
6
⎯
nC
⎯
4
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = −2.5 A, VGS = 0 V
IDR = −2.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
−2.5
A
⎯
⎯
−10
A
⎯
⎯
2.0
V
⎯
135
⎯
ns
⎯ 0.81 ⎯
μC
Marking
J567
Part No.
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-05