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2SJ506 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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제조사
2SJ506
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ506 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
Pulse Test
–1.6
–1.2
–0.8
I
D
= –10 A
–0.4
–5 A
–2 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V
GS
(V)
2SJ506(L), 2SJ506(S)
Static Drain to Source on State Resistance
1000
vs. Drain Current
500
200
V
GS
= –4 V
100
50
–10 V
20
10
–1 –2
Pulse Test
–5 –10 –20 –50 –100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
–5 A
I
D
= –10 A
160
V
GS
= –4 V
120
–2 A
–10 A
80
40
V
GS
= –10 V
–2,–5 A
0
–40
0
40 80 120 160
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
100
Drain Current
50
20
Tc = –25
°
C
10
5
25
°
C
2
75
°
C
1
0.5
–0.1–0.2 –0.5 –1 –2
V
DS
= –10 V
Pulse Test
–5 –10 –20 –50
Drain Current I
D
(A)
5
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