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J619 데이터 시트보기 (PDF) - Toshiba

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J619 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ619
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
High forward transfer admittance: Yfs= 7.7 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
V
100
V
±20
V
16
A
64
75
W
292
mJ
16
A
7.5
mJ
150
°C
55 to150
°C
JEDEC
JEITA
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Circuit Configuration
4
Thermal resistance, channel to case
Rth (ch-c)
1.67
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29

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