2SK1930 데이터 시트보기 (PDF) - Toshiba

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2SK1930

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±20 V, VDS = 0 V

VDS = 800 V, VGS = 0 V

V (BR) DSS ID = 10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 2 A

VDS = 20 V, ID = 2 A

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 4 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Symbol

IDR

IDRP

VDSF

Test Condition

—

—

IDR = 4 A, VGS = 0 V

Marking

2SK1930

Min Typ. Max Unit

—

— ±100 nA

—

—

300

μA

1000 —

—

V

1.5

—

3.5

V

—

3.0 3.8

Ω

1.0 2.0

—

S

— 700 —

—

55

—

pF

— 100 —

—

18

—

—

30

—

ns

—

12

—

—

70

—

—

60

—

—

35

—

nC

—

25

—

Min Typ. Max Unit

—

—

4

A

—

—

12

A

—

—

−1.9

V

K1930

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-09

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