2SK2274 데이터 시트보기 (PDF) - Toshiba
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2SK2274 Datasheet PDF : 6 Pages
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2SK2274
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII·5)
2SK2274
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 1.5Ω (typ.)
l High forward transfer admittance : |Yfs| = 2.5 S (typ.)
l Low leakage current
: IDSS = 300 µA (max) (VDS = 640 V)
l Enhancement−mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
700
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
700
V
Gate−source voltage
VGSS
±30
V
Drain current
DC (Note 1)
ID
Pulse (Note 1)
IDP
5
A
15
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
2.77
°C / W
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-02-06
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